An asymmetric naphthalimide derivative for n-channel organic field-effect transistors.
نویسندگان
چکیده
A new naphthalene diimide (NDI) derivative with an asymmetric aromatic backbone of 2-tetradecylbenzo[lmn]benzo[4,5]imidazo[2,1-b][3,8]phenanthroline-1,3,6(2H)-trione (IZ0) was designed and synthesized. Low LUMO level, large energy gap, and high thermal stability are characterized for this IZ0 compound. The OFET devices based on an IZ0 semiconductor exhibit typical n-type behavior. Through continuously optimizing the fabrication conditions, high performance n-channel OFETs were fabricated based on IZ0 films and single crystals, with the highest carrier mobility of 0.072 cm(2) V(-1) s(-1) and 0.22 cm(2) V(-1) s(-1), respectively.
منابع مشابه
Ballistic (n,0) Carbon Nanotube Field Effect Transistors' I-V Characteristics: A Comparison of n=3a+1 and n=3a+2
Due to emergence of serious obstacles by scaling of the transistors dimensions, it has been obviously proved that silicon technology should be replaced by a new one having a high ability to overcome the barriers of scaling to nanometer regime. Among various candidates, carbon nanotube (CNT) field effect transistors are introduced as the most promising devices for substituting the silicon-based ...
متن کاملA Kinetic study on the dissolution of two naphthalimide based synthesized disperse dyestuffs in the presence of dispersing agents
The controlling kinetics of the water solubility of two synthesized mono azo naphthalimide based disperse dyestuffs in the presence of two different dispersing agents namely Irgasol DAM and lyoprint EV agents at various temperatures were investigated. An exponential rate equation was found to describe the dissolution process. The addition of Irgasol DAM and Lyoprint EV dispersing agents increas...
متن کاملBand bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
متن کاملBand bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
متن کاملEffect of Alkyl Tail on the Visible Spectra and Order Parameters S of some Azo N-Ester-1,8-naphthalimide(ANEN) Disperse Dyestuff
This research is an attempt to measure the effect of alkyl tail on the visible spectra and order parameters S of some azo N-ester-1,8-naphthalimide(ANEN) disperse dyestuff. For the first time, the visible absorption spectra of two azo N-ester-1,8-naphthalimide(ANEN) dyes with identical molecular size and diverse alkyl tails were obtained in liquids and liquid crystalline solvent. Ordinary organ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical chemistry chemical physics : PCCP
دوره 17 40 شماره
صفحات -
تاریخ انتشار 2015